HGT1S2N120BNDS diode equivalent, 12a/ 1200v/ npt series n-channel igbt with anti-parallel hyperfast diode.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is th.
operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.
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