HGTG24N60D1D
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
Key Features
- 24A, 600V
- Latch Free Operation
- Typical Fall Time <500ns
- Low Conduction Loss
- With Anti-Parallel Diode
- tRR < 60ns
