* 2.8A and 3.3A, 350V and 400V
* rDS(ON) = 1.8Ω and 2.5Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switchi.

such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power.

IRF320

IRF3205

IRF3205A

IRF3205H

IRF3205L

IRF3205LPBF

IRF3205PBF

IRF3205S

IRF3205SPBF

IRF3205STRLPBF

IRF3205VPBF

IRF3205Z

IRF3205ZL