IRF320 Datasheet - Intersil Corporation

IRF320 N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF320 Features

* 2.8A and 3.3A, 350V and 400V

* rDS(ON) = 1.8Ω and 2.5Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier

IRF320 Datasheet (67.83 KB)

IRF320 Datasheet Preview — Preview of IRF320 PDF

Datasheet Details

Part number:

IRF320

Manufacturer:

Intersil Corporation

File Size:

67.83 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

IRF320 N-Channel Power MOSFET (Samsung semiconductor)

IRF320 N-Channel Power MOSFET (Fairchild Semiconductor)

IRF320 N-Channel MOSFET Transistor (Inchange Semiconductor)

IRF320 N-Channel Power MOSFETs (Harris)

IRF3205 N-Channel Trench Process Power MOSFET Transistor (Thinki Semiconductor)

IRF3205 N-Channel MOSFET Transistor (Inchange Semiconductor)

IRF3205 Power MOSFET (International Rectifier)

IRF3205 N-Channel Power MOSFET (nELL)

TAGS

IRF320 N-Channel Power MOSFET Intersil Corporation

IRF320 Distributor