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IRF323

N-Channel Power MOSFET

IRF323 Features

* 2.8A and 3.3A, 350V and 400V

* rDS(ON) = 1.8Ω and 2.5Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier

IRF323 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF323 Datasheet (67.83 KB)

Preview of IRF323 PDF

Datasheet Details

Part number:

IRF323

Manufacturer:

Intersil Corporation

File Size:

67.83 KB

Description:

N-channel power mosfet.

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TAGS

IRF323 N-Channel Power MOSFET Intersil Corporation

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