IRF321 Datasheet - Intersil Corporation

IRF321 N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF321 Features

* 2.8A and 3.3A, 350V and 400V

* rDS(ON) = 1.8Ω and 2.5Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier

IRF321_IntersilCorporation.pdf

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Datasheet Details

Part number:

IRF321

Manufacturer:

Intersil Corporation

File Size:

67.83 KB

Description:

N-channel power mosfet.

IRF321 Distributor

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IRF321 IRF321 N-Channel Power MOSFET Intersil Corporation