* 15A, 400V
* rDS(ON) = 0.300Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for
IRF350
Intersil Corporation
59.64 KB
N-channel power mosfet.
IRF350
Data Sheet March 1999 File Number 1826.3
15A, 400V, 0.300 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power.
📁 Related Datasheet
IRF350 - N-Channel MOSFET
(NTE)
IRF350
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO3 Type Package
D
Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D.
IRF350 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF350
DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switch.
IRF350 - N-Channel Power MOSFET
(Samsung semiconductor)
.
IRF350 - N-Channel Power MOSFET
(International Rectifier)
PD - 90339F
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF350 BVDSS 400V RDS(on) .
IRF350 - N-Channel Power MOSFET
(Fairchild Semiconductor)
.
IRF351 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF351
DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switch.
IRF351 - N-Channel Power MOSFET
(Fairchild Semiconductor)
.
IRF351 - N-Channel Power MOSFET
(Samsung semiconductor)
.
