IRF322 N-Channel Power MOSFET

Intersil Corporation

Description

Semiconductor IRF320, IRF321, IRF322, IRF323 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

📥 Download Datasheet

IRF322 Datasheet Preview — Preview of IRF322 PDF

Datasheet Specifications

Part number: IRF322
Manufacturer: Intersil Corporation
File Size: 67.83 KB
Datasheet: IRF322_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 2.8A and 3.3A, 350V and 400V
* rDS(ON) = 1.8Ω and 2.5Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17404. July 1998 Fe

IRF322 Distributors

📁 Related Datasheet

IRF320 IRF3205 IRF3205A IRF3205H IRF3205L IRF3205LPBF

📌 All Tags

IRF322 N-Channel Power MOSFET Intersil Corporation

Intersil Corporation IRF322-like datasheet