* 5.5A, 400V
* rDS(ON) = 1.000Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for
IRF330
Intersil Corporation
58.20 KB
N-channel power mosfet.
IRF330
Data Sheet March 1999 File Number
1570.4
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field.
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