IRF330 Datasheet - Intersil Corporation

IRF330 N-Channel Power MOSFET

IRF330 Data Sheet March 1999 File Number 1570.4 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching .

IRF330 Features

* 5.5A, 400V

* rDS(ON) = 1.000Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRF330 Datasheet (58.20 KB)

IRF330 Datasheet Preview — Preview of IRF330 PDF

Datasheet Details

Part number:

IRF330

Manufacturer:

Intersil Corporation

File Size:

58.20 KB

Description:

N-channel power mosfet.

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IRF330 N-Channel Power MOSFET Intersil Corporation

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