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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF352
DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged
APPLICATIONS ·high voltage,high speed applications such as off-line
Switching power supplies,AC and DCmotor controls relay and solenoid driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
400 ±20
V V
Drain Current-continuous@ TC=25℃ 13 A
Total Dissipation@TC=25℃
150 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
0.83 30
℃/W ℃/W
isc website：www.iscsemi.
IRF352 Datasheet
