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JANSR2N7294 - 23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFET

Description

The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

  • 23A, 200V, rDS(ON) = 0.115Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 12nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Ordering Information PART NUMBER JANSR2N7294.

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JANSR2N7294 Formerly FRF250R4 June 1998 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure.
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