RFD15P05, RFD15P05SM, RFP15P05
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain Gate Voltage (RG = 20KΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFD15P05, RFD15P05SM,
RFP15P05
-50
-50
±20
-15
Refer to Peak Current Curve
Refer to UIS Curve
80
0.533
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
tD(ON)
tR
tD(OFF)
tF
tOFF
QG(TOT)
QG(-10)
QG(TH)
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS
VDS = 0.8 x Rated BVDSS, TC = 150oC
VGS = ±20V
ID = 15A, VGS = -10V (Figure 9)
VDD = -25V, ID ≈ 7.5A, RG = 12.5Ω,
RL = 3.3Ω, VGS = -10V
(Figures 16, 17)
VGS = 0V to -20V
VGS = 0V to -10V
VGS = 0V to -2V
VDD = -40V, ID = 15A,
RL = 2.67Ω,
IG(REF) = -0.65mA
(Figures 18, 19)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CISS
COSS
CRSS
RθJC
RθJA
VDS = -25V, VGS = 0V
f = 1MHz (Figure 12)
TO-220AB, TO-251AA, TO-252AA
TO-251AA, TO-252AA
TO-220AB
MIN TYP MAX UNITS
-50 - - V
-2.0 - -4.0 V
- - -1 µA
- - 25 µA
- - ±100 nA
- - 0.150 Ω
- - 60 ns
- 16
-
ns
- 30
-
ns
- 50
-
ns
- 20
-
ns
- - 100 ns
- - 150 nC
- - 75 nC
- - 3.5 nC
- 1150
-
pF
- 300
-
pF
- 56
-
pF
- - 1.875 oC/W
- - 100 oC/W
- - 62.5 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Source to Drain Diode Voltage
Reverse Recovery Time
NOTES:
VSD
tRR
ISD = -15A
ISD = -15A, dISD/dt = -100A/µs
- - -1.5
- - 125
2. Pulse test: pulse duration ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
V
ns
4-97
![[partsNo] view html](https://d4u-datasheet.netdna-ssl.com/img/html.jpg "[partsNo] view html"){kind=small}
