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130P04A - P-channel Enhancement Mode Power MOSFET

General Description

JMT P-channel Enhancement Mode Power MOSFET

Key Features

  • VDS= -40V, ID= -40A RDS(ON) < 14.3mΩ @ VGS = -10V RDS(ON) < 22mΩ @ VGS = -4.5V.
  • Advanced Trench Technology.
  • Excellent RDS(ON) and Low Gate Charge.
  • Lead free product is acquired.

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JMTP130P04A Description JMT P-channel Enhancement Mode Power MOSFET Features  VDS= -40V, ID= -40A RDS(ON) < 14.3mΩ @ VGS = -10V RDS(ON) < 22mΩ @ VGS = -4.