3DD13002
Key Features
- EMITTER mW (Tamb=25℃)
- COLLECTOR
- BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1 2 3
- Part: 3DD13002
- Description: TRANSISTOR
- Category: Transistor
- Manufacturer: Jiangsu Changjiang
- Size: 52.23 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 3DD13002B1-H | Huajing Microelectronics | Silicon NPN bipolar transistor |
| 3DD13002 | Galaxy Microelectronics | High Voltage Fast Switching NPN Power Transistor |
| 3DD13002 | TRANSYS Electronics | Plastic-Encapsulated Transistors |
| 3DD13002S | JILIN SINO-MICROELECTRONICS | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 3DD13002RUD | Huajing Microelectronics | Silicon NPN Transistor |
| 3DD13002B1 | Huajing Microelectronics | Silicon NPN Transistor |
| 3DD13002B1-7 | Huajing Microelectronics | Silicon NPN Transistor |
| 3DD13002B | Weitron Technology | Switch Mode NPN Transistors |
| 3DD13002R6 | Huajing Microelectronics | NPN Transistor |
| 3DD13003F | JCET | NPN Transistor |