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KEC

2N7000 Datasheet Preview

2N7000 Datasheet

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed(Note 1)
Drain Power Dissipation
Junction Temperature
VDSS
VGSS
ID
IDP
PD
Tj
Storage Temperature Range
Tstg
Note 1) Pulse Width 10 , Duty Cycle 1%
RATING
60
20
500
2000
625
150
-55 150
UNIT
V
V
mA
mW
2N7000
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
BC
KE
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00+_ 0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. SOURCE
2. GATE
3. DRAIN
TO-92
EQUIVALENT CIRCUIT
D
G
S
PLEASE HANDLE WITH CAUTION.
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
BVDSS
IDSS
IGSSF
Gate-Body Leakage, Reverse
IGSSR
TEST CONDITION
VGS=0V, ID=10 A
VDS=60V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
100
-100
UNIT
V
A
nA
nA
2009. 11. 17
Revision No : 2
1/4




KEC

2N7000 Datasheet Preview

2N7000 Datasheet

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

No Preview Available !

2N7000
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note2)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Gate Threshold Voltage
Drain-Source ON Resistance
Drain-Source ON Voltage
On State Drain Current
Forward Transconductance
Drain-Source Diode Forward Voltage
Vth
RDS(ON)
VDS(ON)
ID(ON)
gFS
VSD
VDS=VGS, ID=250 A
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VGS=10V, VDS= 2 VDS(ON)
VDS=10V, ID=500mA
VGS=0V, IS=200mA (Note1)
(Note 2) Pulse Test : Pulse Width 80 , Duty Cycle 1%
MIN.
1.1
-
-
-
-
500
200
-
TYP.
1.8
1.2
1.5
0.6
0.075
-
580
0.78
MAX.
2.3
1.8
2.1
0.9
0.105
-
-
1.15
UNIT
V
V
mA
mS
V
DYNAMIC CHARACTERISTICS
CHARACTERISTIC
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-On Time
Turn-Off Time
SYMBOL
Ciss
Crss
Coss
ton
toff
TEST CONDITION
VDS=25V, VGS=0V, f=1MHz
VDD=30V, RL=155 , ID=190mA,
VGS=10V
MIN.
-
-
-
-
-
TYP.
47.1
3.5
8.8
8.8
14.8
MAX.
-
-
-
-
-
UNIT
pF
nS
SWITCHING TIME TEST CIRCUIT
V DD
VGS
V IN
G
RL
D
VOUT
DUT
S
t d(on)
t on
tr
90%
t d(off)
t off
tf
90%
OUTPUT, VOUT
INPUT, VIN
10%
10%
50%
10%
INVERTED
90%
50%
PULSE WIDTH
2009. 11. 17
Revision No : 2
2/4


Part Number 2N7000
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Maker KEC
Total Page 4 Pages
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