Part number:
KDS112
Manufacturer:
KEC
File Size:
27.39 KB
Description:
Silicon epitaxial type diode.
* Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 30 50 125 -55 125 UNIT V mA C L A J G KDS112 S
KDS112
KEC
27.39 KB
Silicon epitaxial type diode.
📁 Related Datasheet
KDS112E SILICON EPITAXIAL TYPE DIODE (KEC)
KDS113 SILICON EPITAXIAL TYPE DIODE (KEC)
KDS114 SILICON EPITAXIAL PLANAR DIODE (KEC)
KDS114E SILICON EPITAXIAL PLANAR DIODE (KEC)
KDS114V SILICON EPITAXIAL PLANAR DIODE (KEC)
KDS115 SILICON EPITAXIAL PLANAR DIODE (KEC)
KDS120 SILICON EPITAXIAL TYPE DIODE (KEC)
KDS120E SCHOTTKY BARRIER TYPE DIODE (KEC)
KDS120V SCHOTTKY BARRIER TYPE DIODE (KEC)
KDS121 SILICON EPITAXIAL PLANAR DIODE (KEC)