KDS114E
FEATURES
Small Package. Small Total Capacitance : CT=1.2p F(Max.). Low Series Resistance : r S=0.5 (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Forward Current Junction Temperature
VR IF Tj
Storage Temperature Range
Tstg
RATING 35 100 150
-55 150
UNIT V m A
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK B A
C 1
2 D
1. ANODE 2. CATHODE
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10
Marking
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage Reverse Current Reverse Voltage Total Capacitance
VF IR VR CT
Series Resistance rs
TEST CONDITION IF=2m A VR=15V IR=1 A VR=6V, f=1MHz IF=2m A, f=100MHz
MIN. 35
- TYP. 0.7 0.5
MAX. 0.85 0.1
1.2 0.9
UNIT V A V p F
2014. 3. 31
Revision No :...
