Datasheet4U Logo Datasheet4U.com

KDS115 - SILICON EPITAXIAL PLANAR DIODE

Key Features

  • Small Package. Small Total Capacitance : CT=1.2pF(Max. ). Low Series Resistance : rS=0.6 (Typ. ).

📥 Download Datasheet

Datasheet Details

Part number KDS115
Manufacturer KEC
File Size 27.47 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet KDS115 Datasheet

Other Datasheets by KEC

Part Number Description
KDS112 SILICON EPITAXIAL TYPE DIODE
KDS112E SILICON EPITAXIAL TYPE DIODE
KDS113 SILICON EPITAXIAL TYPE DIODE
KDS114 SILICON EPITAXIAL PLANAR DIODE
KDS114E SILICON EPITAXIAL PLANAR DIODE
KDS114V SILICON EPITAXIAL PLANAR DIODE
KDS120 SILICON EPITAXIAL TYPE DIODE
KDS120E SCHOTTKY BARRIER TYPE DIODE
KDS120V SCHOTTKY BARRIER TYPE DIODE
KDS121 SILICON EPITAXIAL PLANAR DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA VHF TUNER BAND SWITCH APPLICATIONS. FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 30 50 125 -55 125 UNIT V mA C L A J G KDS115 SILICON EPITAXIAL PLANAR DIODE E MB M DIM MILLIMETERS 2 DA B 2.00+_ 0.20 1.25 +_ 0.15 13 C 0.90 +_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 NK H N J K L M N 1.30 0.00-0.10 0.70 0.42+_ 0.10 0.10 MIN 1. CATHODE 1 2. ANODE 2 3. ANODE1/ CATHODE 2 3 21 USM Marking Type Name R3 Lot No.