KEC KDS115
SILICON EPITAXIAL PLANAR DIODE
| Part No. | KDS115 |
|---|---|
| Datasheet | KDS115 Download |
| Manufacturer |  KEC |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
APPLICATIONS
.FEATURES
hSmall Package. hSmall Total Capacitance : CT=1.2pF(Max.). hLow Series Resistance : rS=0.6ʃ(Typ.). hSuffix U : Qualified to AEC-Q101. ex) KDS115-RTK/HU MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL Reverse Voltage VR Forward Current IF Junction Temperature Tj Storage Temperature Range Tstg RATING 30 50 125 -55q125 UNIT V mA KDS115 SILICON EPITAXIAL PLANAR DIODE E M B M 2 D 1 3 J A G C L N K 1. CATHODE 1 2. ANODE 2 3. ANODE1/ CATHODE 2 H N 3 2 1 DIM MILLIMETERS A 2.00+_ 0.20 B 1.25+_ 0.15 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 L 0.70 M 0.42 +_0.10 N 0.10 Min. USM Marking Type Name R3 Lot No.ELECTRICAL CHARACTERISTICS
(Ta=25) CHARACTERISTIC SYMBOL Forward Voltage VF Reverse Current IR Reverse Voltage VR Total Capacitance CT Series Resistance rs TEST CONDITION IF=2mA VR=15V IR=1ǺA VR=6V, f=1MHz IF=2mA, f=100MHz MIN. 30 - TYP. 0.8 0.6 MAX. 0.85 0.1 1.2 0.9 UNIT V ǺA V pF ʃ 2020. 10. 05 Revision No : 4 1/2 SERIES...