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KEC

KDV301E Datasheet Preview

KDV301E Datasheet

SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR
TECHNICAL DATA
TV Tuning.
FEATURES
High Capacitance Ratio : C2V/C25V=14.5(Min.)
Low Series Resistance : rs=1.1 (Max.)
Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
VR
Tj
Tstg
RATING
32
150
-55 150
UNIT
V
KDV301E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
Marking
Type Name
VQ
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current
Capacitance
Capacitance Ratio
IR1
IR2
C2V
C25V
C2V/C25V
VR=30V
VR=30V, Ta=60
VR=2V, f=1MHz
VR=25V, f=1MHz
-
Series Resistance
rS VR=5V, f=470MHz
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
C(Min.)
0.02
(VR=2~25V)
MIN.
-
-
39.5
2.60
14.5
-
TYP.
-
-
-
-
-
-
MAX.
10
100
47.4
3.03
-
1.1
UNIT
nA
pF
2005. 6. 1
Revision No : 0
1/2




KEC

KDV301E Datasheet Preview

KDV301E Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

KDV301E
109
1010
1011
1012
1013
0
IR - VR
10 20 30
Reverse Voltage VR (V)
40
CR - VR
60
f = 1MHz
50
40
30
20
10
0
0.5
1
10
Reverse Voltage VR (V)
30
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5
rs - VR
f = 470MHz
1 10
Reverse Voltage VR (V)
30
2005. 6. 1
Revision No : 0
2/2


Part Number KDV301E
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
Total Page 2 Pages
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