KDV358
KDV358 is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
FEATURES
Good C-V Linearity. Low Series Resistance. : r S=0.4 Small Package : USC.
(Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature Storage Temperature Range
VR Tj Tstg
RATING 15 150
-55 150
UNIT V
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK E A K
B 1
2 D
MM 1. ANODE 2. CATHODE
DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6
Marking
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR1 IR2
Capacitance
C1V C4V
Capacitance Ratio
C1V/C4V
Series Resistance r S
TEST CONDITION VR=15V VR=15V, Ta=60 VR=1V, f=1MHz VR=4V, f=1MHz
VR=1V, f=470MHz
MIN.
- 19.5 8.0...
