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KHB019N20P1 - High Voltage MOSFETs

Download the KHB019N20P1 datasheet PDF (KHB019N20F1 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for high voltage mosfets.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for DC/DC converters and switching mode power supplies.

Features

  • VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.18 Qg(typ. )=35nC @VGS = 10V K M L J D N N P H 1 2 3 DIM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KHB019N20F1_KECsemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KHB019N20P1
Manufacturer KEC
File Size 103.44 KB
Description High Voltage MOSFETs
Datasheet download datasheet KHB019N20P1 Datasheet
Other Datasheets by KEC semiconductor

Full PDF Text Transcription

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters and switching mode power supplies. KHB019N20P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR A O C F E G B Q I FEATURES VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.18 Qg(typ.)=35nC @VGS = 10V K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.
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