KHB6D0N40P mosfets equivalent, (khb6d0n40f / khb6d0n40p) high voltage mosfets.
VDSS=400V, ID=6.0A Drain-Source ON Resistance : RDS(ON)=1.0 Qg(typ.)=32nC @VGS=10V
K M L J D N N
P
H
1
2
3
DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
A
KHB6D0N4.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 104.53KB)