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KHB6D0N40P - (KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs

Download the KHB6D0N40P datasheet PDF (KHB6D0N40F included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for (khb6d0n40f / khb6d0n40p) high voltage mosfets.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS=400V, ID=6.0A Drain-Source ON Resistance : RDS(ON)=1.0 Qg(typ. )=32nC @VGS=10V K M L J D N N P H 1 2 3 DIM.

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Note: The manufacturer provides a single datasheet file (KHB6D0N40F_KECsemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KHB6D0N40P
Manufacturer KEC
File Size 104.53 KB
Description (KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs
Datasheet download datasheet KHB6D0N40P Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. A KHB6D0N40P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR O C F E G B Q I FEATURES VDSS=400V, ID=6.0A Drain-Source ON Resistance : RDS(ON)=1.0 Qg(typ.)=32nC @VGS=10V K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.
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