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KHB6D0N40P, KHB6D0N40F Datasheet - KEC semiconductor

KHB6D0N40P (KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. A KHB6D0N40P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR O C F .

KHB6D0N40P Features

* VDSS=400V, ID=6.0A Drain-Source ON Resistance : RDS(ON)=1.0 Qg(typ.)=32nC @VGS=10V K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2

KHB6D0N40F_KECsemiconductor.pdf

This datasheet PDF includes multiple part numbers: KHB6D0N40P, KHB6D0N40F. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

KHB6D0N40P, KHB6D0N40F

Manufacturer:

KEC semiconductor

File Size:

104.53 KB

Description:

(khb6d0n40f / khb6d0n40p) high voltage mosfets.

Note:

This datasheet PDF includes multiple part numbers: KHB6D0N40P, KHB6D0N40F.
Please refer to the document for exact specifications by model.

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TAGS

KHB6D0N40P KHB6D0N40F KHB6D0N40F KHB6D0N40P High Voltage MOSFETs KEC semiconductor

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