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KHB9D0N50P1, KHB9D0N50F1 Datasheet - KEC semiconductor

KHB9D0N50P1 (KHB9D0N50F1 / KHB9D0N50P1) High Voltage MOSFETs

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB9D0N50P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR A O C.

KHB9D0N50P1 Features

* VDSS(Min.)= 500V, ID= 9A Drain-Source ON Resistance : RDS(ON)=0.8 @VGS =10V Qg(typ.) =34.6nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+

KHB9D0N50F1_KECsemiconductor.pdf

This datasheet PDF includes multiple part numbers: KHB9D0N50P1, KHB9D0N50F1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

KHB9D0N50P1, KHB9D0N50F1

Manufacturer:

KEC semiconductor

File Size:

105.13 KB

Description:

(khb9d0n50f1 / khb9d0n50p1) high voltage mosfets.

Note:

This datasheet PDF includes multiple part numbers: KHB9D0N50P1, KHB9D0N50F1.
Please refer to the document for exact specifications by model.

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KHB9D0N50P1 KHB9D0N50F1 KHB9D0N50F1 KHB9D0N50P1 High Voltage MOSFETs KEC semiconductor

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