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KDS4953 - Dual 30V P-Channel PowerTrench MOSFET

Key Features

  • -5 A, -30 V. RDS(ON) = 55m RDS(ON) = 95m Low gate charge(6nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching speed 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 @ VGS = -10V @ VGS =-4.5V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) Power Dissip.

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SMD Type Dual 30V P-Channel PowerTrench MOSFET KDS4953 IC IC Features -5 A, -30 V. RDS(ON) = 55m RDS(ON) = 95m Low gate charge(6nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching speed 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 @ VGS = -10V @ VGS =-4.