SI2301BDS P-Channel Enhancement MOSFET
● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Volt.
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