Datasheet Details
| Part number | SISS27DN-T1-GE3 |
|---|---|
| Manufacturer | Kexin Semiconductor |
| File Size | 582.61 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | SISS27DN-T1-GE3-Kexin.pdf |
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Overview: SMD Type SISS27DN-T1-GE3 MOSFET 30V P-Channel MOSFET General.
| Part number | SISS27DN-T1-GE3 |
|---|---|
| Manufacturer | Kexin Semiconductor |
| File Size | 582.61 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | SISS27DN-T1-GE3-Kexin.pdf |
|
|
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Product Summary The SISS27DN uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is ideal for load switch and battery protection applications.
• RoHS and Halogen-Free Compliant VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -6V) -30V -50A < 6.2mΩ < 8.9mΩ 100% UIS Tested 100% Rg Tested PowerPAK 1212-8S Top View Bottom Pin 1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Repetitive avalanche energy L=0.1mH C IDSM IAR, IAS EAR, EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -50 -39 -210 -25 -20 -44 97 83 33 6.25 4 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16 45 1.1 Max 20 55 1.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W SMD Type MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-6V, ID=-20A VGS=-4.5V, ID=-10A Forward Transconductance VDS=-5V, ID=-20A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous CurrentG TJ=55°C TJ=125°C -30 -1.7 -210 -2.2 5.1 7.6 7.1 10.7 46 -0.7 -1
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| Part Number | Description |
|---|---|
| SIS2305PLT1G | P-Channel MOSFET |