LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
I D (V GS = -10V)
RDS(ON) (VGS = -10V)
RDS(ON) (VGS = -4.5V)
< 100m Ω
The LP3407LT1G uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is
suitable for use as a load switch or in PWM applications.
S- Prefix for Automotive and Other Applications Req uiring Uniq ue
Site and Control Change Req uirements; AEC-Q101 Qualified and
SOT– 23 (TO–236AB)
MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Continuous Drain TA=25°C
Pulsed Drain Current C
Power Dissipation B TA=70°C
Junction and Storage Temperature Range
-55 to 150
THERMAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t ≤ 10s
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
Rev .O 1/6