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LRC

S-LP3407LT1G Datasheet Preview

S-LP3407LT1G Datasheet

P-Channel Enhancement-Mode MOSFET

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LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
VDS
I D (V GS = -10V)
RDS(ON) (VGS = -10V)
RDS(ON) (VGS = -4.5V)
-30V
-4.1A
< 70m
< 100m
FEATURES
The LP3407LT1G uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is
suitable for use as a load switch or in PWM applications.
S- Prefix for Automotive and Other Applications Req uiring Uniq ue
Site and Control Change Req uirements; AEC-Q101 Qualified and
PPAP Capable.
ORDERING INFORMATION
Device
LP3407LT1G
S-LP3407LT1G
LP3407LT3G
S-LP3407LT3G
Marking
A07
A07
Shipping
3000/Tape&Reel
10000/Tape&Reel
LP3407LT1G
S-LP3407LT1G
3
1
2
SOT– 23 (TO–236AB)
D
G
S
MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current
TA=70°C
Pulsed Drain Current C
TA=25°C
Power Dissipation B TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
Maximum
-30
±20
-4.1
-3.5
-25
1.4
0.9
-55 to 150
Units
V
V
A
W
°C
THERMAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
Units
90 °C/W
125 °C/W
80 °C/W
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
Rev .O 1/6




LRC

S-LP3407LT1G Datasheet Preview

S-LP3407LT1G Datasheet

P-Channel Enhancement-Mode MOSFET

No Preview Available !

LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-4.1A
VGS=-4.5V, ID=-3A
Forward Transconductance
VDS=-5V, ID=-4A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=-10V, VDS=-15V, ID=-4A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=3.6,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
Min
-30
-1
-25
415
70
40
3.5
7.4
3.7
1.3
1.3
8.8
4
Typ Max Units
V
-1
-5
µA
±100 nA
-2 -3 V
A
70
95
m
100 m
10 S
-0.7 -1
V
-2 A
520 625
100 130
65 90
7.5 11.5
pF
pF
pF
9.2 11 nC
4.6 6 nC
1.6 1.9 nC
2.2 3.1 nC
7.5 ns
5.5 ns
19 ns
7 ns
11 13 ns
5.3 6.4 nC
Rev .O 2/6


Part Number S-LP3407LT1G
Description P-Channel Enhancement-Mode MOSFET
Maker LRC
Total Page 6 Pages
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