LPM3414 Datasheet PDF (20V/3A N-Channel Enhancement Mode Field Effect Transistor)

LPM3414 - 20V/3A N-Channel Enhancement Mode Field Effect Transistor

Description

The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

20V/3A, RDS(ON)＜62mΩ(max. )@VGS=4.5V.
20V/2.5A, RDS(ON)＜86mΩ(max. )@VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
SOT23 Package.

Datasheet Details

Part number	LPM3414
Manufacturer	Lowpowersemi
File Size	366.31 KB
Description	20V/3A N-Channel Enhancement Mode Field Effect Transistor
Datasheet	LPM3414 Datasheet
Additional preview pages of the LPM3414 datasheet.

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Full PDF Text Transcription

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Preliminary Datasheet LPM3414 20V/3A N-Channel Enhancement Mode Field Effect Transistor General Description The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching is needed. Order Information LPM3414 □ □ □ F: Pb-Free Package Type B3: SOT23-3 Pin Configurations (SOT-23) TOP VIEW G D S SOT23L(Top View) D G S Features  20V/3A, RDS(ON)＜62mΩ(max.)@VGS=4.5V  20V/2.5A, RDS(ON)＜86mΩ(max.)@VGS=2.

Published: Sep 14, 2018 |