LPM3414 transistor equivalent, 20v/3a n-channel enhancement mode field effect transistor.
* 20V/3A, RDS(ON)＜62mΩ(max.)@VGS=4.5V
* 20V/2.5A, RDS(ON)＜86mΩ(max.)@VGS=2.5V
* Super high density cell design for extremely low
RDS(ON)
* SOT23 Package
.
notebook computer power management and other battery powered circuits where high-side switching is needed.
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The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are .
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