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LPM4953 - Dual P -Channel Enhancement Power MOSFET

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LPM4953 Dual P -Channel Enhancement Power MOSFET by Lowpowersemi - Datasheet Preview — Datasheet preview – LPM4953

Datasheet Details

Part number	LPM4953
Manufacturer	Lowpowersemi
File Size	1.11 MB
Description	Dual P -Channel Enhancement Power MOSFET
Datasheet	LPM4953 Datasheet
Additional preview pages of the LPM4953 datasheet.

LPM4953 Product details

Description

The LPM4953 integrates two P-Channel enhancement MOSFET Transistor.

It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for using in DC-DC conversion, power switch and charging circuit.

Features

Trench Technology.
PMOS: VDS=-15V RDS(ON) < 65mΩ, ID=3.6A @ VGS=-4.5V RDS(ON) < 42mΩ, ID=5A @ VGS=-10V.
Super high density cell design.
Extremely Low Threshold Voltage.
Small package SOP-8 Order Information LPM4593.
F: Pb-Free Package Type SO: SOP-8.

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Published: Sep 14, 2018 |