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LPM4953 - Dual P -Channel Enhancement Power MOSFET

General Description

The LPM4953 integrates two P-Channel enhancement MOSFET Transistor.

It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for using in DC-DC conversion, power switch and charging circuit.

Key Features

  • Trench Technology.
  • PMOS: VDS=-15V RDS(ON) < 65mΩ, ID=3.6A @ VGS=-4.5V RDS(ON) < 42mΩ, ID=5A @ VGS=-10V.
  • Super high density cell design.
  • Extremely Low Threshold Voltage.
  • Small package SOP-8 Order Information LPM4593.
  • F: Pb-Free Package Type SO: SOP-8.

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Datasheet Details

Part number LPM4953
Manufacturer Lowpowersemi
File Size 1.11 MB
Description Dual P -Channel Enhancement Power MOSFET
Datasheet download datasheet LPM4953 Datasheet

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Preliminary Datasheet LPM4953 Dual P -Channel Enhancement Power MOSFET General Description The LPM4953 integrates two P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM4953 is Pb-free and Halogen-free. Features  Trench Technology  PMOS: VDS=-15V RDS(ON) < 65mΩ, ID=3.6A @ VGS=-4.5V RDS(ON) < 42mΩ, ID=5A @ VGS=-10V  Super high density cell design  Extremely Low Threshold Voltage  Small package SOP-8 Order Information LPM4593 □ □ □ F: Pb-Free Package Type SO: SOP-8 Applications  Driver for Relay, Solenoid, Motor, LED etc.