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LPM3414 Datasheet 20v/3a N-channel Enhancement Mode Field Effect Transistor

Manufacturer: Lowpowersemi

Overview: Preliminary Datasheet LPM3414 20V/3A N-Channel Enhancement Mode Field Effect Transistor.

Datasheet Details

Part number LPM3414
Manufacturer Lowpowersemi
File Size 366.31 KB
Description 20V/3A N-Channel Enhancement Mode Field Effect Transistor
Datasheet LPM3414-Lowpowersemi.pdf

General Description

The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for low voltage applications, notebook puter power management and other battery powered circuits where high-side switching is needed.

Key Features

  • 20V/3A, RDS(ON)＜62mΩ(max. )@VGS=4.5V.
  • 20V/2.5A, RDS(ON)＜86mΩ(max. )@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • SOT23 Package.

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