LPM3414 Description
The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook puter power management and other battery powered circuits where high-side switching is needed.
LPM3414 Key Features
- 20V/3A, RDS(ON)＜62mΩ(max.)@VGS=4.5V
- 20V/2.5A, RDS(ON)＜86mΩ(max.)@VGS=2.5V
- Super high density cell design for extremely low
- SOT23 Package