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LPM3414 - 20V/3A N-Channel Enhancement Mode Field Effect Transistor

General Description

The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 20V/3A, RDS(ON)＜62mΩ(max. )@VGS=4.5V.
  • 20V/2.5A, RDS(ON)＜86mΩ(max. )@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • SOT23 Package.

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Datasheet Details

Part number LPM3414
Manufacturer Lowpowersemi
File Size 366.31 KB
Description 20V/3A N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LPM3414 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet LPM3414 20V/3A N-Channel Enhancement Mode Field Effect Transistor General Description The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching is needed. Order Information LPM3414 □ □ □ F: Pb-Free Package Type B3: SOT23-3 Pin Configurations (SOT-23) TOP VIEW G D S SOT23L(Top View) D G S Features  20V/3A, RDS(ON)＜62mΩ(max.)@VGS=4.5V  20V/2.5A, RDS(ON)＜86mΩ(max.)@VGS=2.