LPM3401 Description
The LPM3401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching.
LPM3401 Key Features
- 15V/-4.0A,RDS(ON)＜58mΩ(typ.)@VGS=-10V
- 15V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V
- Super high density cell design for extremely low
- SOT23 Package