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LPM3401 - 15V/4A P-Channel Enhancement Mode Field Effect Transistor

General Description

The LPM3401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -15V/-4.0A,RDS(ON)＜58mΩ(typ. )@VGS=-10V.
  • -15V/-3.0A,RDS(ON)＜68mΩ(typ. )@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • SOT23 Package.

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Datasheet Details

Part number LPM3401
Manufacturer Lowpowersemi
File Size 355.92 KB
Description 15V/4A P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LPM3401 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description The LPM3401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. Order Information LPM3401 □ □ □ F: Pb-Free Package Type B3: SOT23 Pin Configurations Features  -15V/-4.0A,RDS(ON)＜58mΩ(typ.)@VGS=-10V  -15V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.