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LPM3413 - P-Channel Enhancement Mode Field Effect Transistor

General Description

The LPM3413 uses advanced trench technology to provide excellent RDS(ON).

This device is suitable for using as a load switch or in PWM applications.

Standard Product LPM3413 is Pb-free.

Key Features

  • -20V/2.0A,RDS(ON) ≤130mΩ(max. )@VGS=-2.5V.
  • -20V/3A,RDS(ON) ≤95mΩ(max. )@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • SOT23 Package.

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Datasheet Details

Part number LPM3413
Manufacturer Lowpowersemi
File Size 372.61 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LPM3413 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet LPM3413 P-Channel Enhancement Mode Field Effect Transistor General Description The LPM3413 uses advanced trench technology to provide excellent RDS(ON). This device is suitable for using as a load switch or in PWM applications. Standard Product LPM3413 is Pb-free. LPM3413 is a Green Product ordering option. LPM3413 are electrically identical. Order Information LPM3413 □ □ □ F: Pb-Free Package Type B3: SOT23 Features  -20V/2.0A,RDS(ON) ≤130mΩ(max.)@VGS=-2.5V  -20V/3A,RDS(ON) ≤95mΩ(max.)@VGS=-4.