MAGX-000035-01000S Key Features
- GaN Depletion-Mode HEMT Microwave Transistor
- mon-Source configuration - No internal matching - Broadband Class AB operation - RoHS- pliant - +50 V Typical Oper
- Part: MAGX-000035-01000S
- Manufacturer: MACOM Technology Solutions
- Size: 585.07 KB
Related MACOM Technology Solutions Datasheets
| Part Number | Description |
|---|---|
| MAGX-000035-010000 | Power Transistor |
| MAGX-000035-01000P | Pulsed Transistor |
| MAGX-000035-015000 | Power Transistor |
| MAGX-000035-01500S | Power Transistor |
| MAGX-000025-150000 | Power Transistor |
MAGX-000035-01000S Description
The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-01000X is...