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MAGX-000035-015000 - Power Transistor

Download the MAGX-000035-015000 datasheet PDF. This datasheet also covers the MAGX-000035-015000-MA variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The MAGX-000035-01500X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications.

Key Features

  •  GaN on SiC Depletion Mode Transistor.
  •  Common-Source Configuration.
  •  Broadband Class AB Operation.
  •  Thermally Enhanced Package (Flanged: Cu/W, Flangeless: Cu).
  •  RoHS.
  • Compliant.
  •  +50V Typical Operation.
  •  MTTF = 600 years (TJ < 200°C) Primary.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAGX-000035-015000-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MAGX-000035-015000 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MAGX-000035-015000. For precise diagrams, and layout, please refer to the original PDF.

MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Features  GaN on SiC Depletion Mode Transistor  Common-Source Configu...

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tures  GaN on SiC Depletion Mode Transistor  Common-Source Configuration  Broadband Class AB Operation  Thermally Enhanced Package (Flanged: Cu/W, Flangeless: Cu)  RoHS* Compliant  +50V Typical Operation  MTTF = 600 years (TJ < 200°C) Primary Applications  Commercial Wireless Infrastructure (WCDMA, LTE, WiMAX)  Air Traffic Control Radar - Commercial  Weather Radar - Commercial  Military Radar - Military  Public Radio  Industrial, Scientific and Medical  SATCOM  Instrumentation Description The MAGX-000035-01500X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power tra