CGH40010 hemt equivalent, rf power gan hemt.
* Up to 6 GHz Operation
* 16 dB Small Signal Gain at 2.0 GHz
* 14 dB Small Signal Gain at 4.0 GHz
* 13 W typical PSAT
* 65 % Efficiency at PSAT
* .
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and com.
The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer hig.
Image gallery
TAGS
Download (Size : 826.48KB)