CGHV40200PP Datasheet | MACOM Technology Solutions

Description The CGHV40200PP is an unmatched, gallium nitride (Ga N) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. Ga N HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40200PP ideal for linear and pressed amplifier circuits. The transistor is available in a 4-lead flange package. Features - Up to 3.0 GHz Operation - 21 d B Small Signal Gain at 1.8 GHz - 250 W typical PSAT - 67% Efficiency at PSAT - 50 V Operation Package Type: 440199 PN: CGHV40200PP Applications - 2-Way Private Radio - Broadband Amplifiers - Cellular Infrastructure - Test Instrumentation - Class A, AB, Linear Amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Typical Performance Over 1.7-1.9 GHz (TC = 25˚C), CW Parameter Small Signal Gain Gain @ PIN = 38 d Bm POUT @ PIN = 38 d Bm Drain Efficiency @ PIN = 38 d Bm 1.7 GHz 21.7 16.5 270 64 1.8 GHz 21.0 16.1 250 67 1.9 GHz 20.1 15.4 218 65 Units d B d B W % Large Signal Models Available for ADS and MWO 1 MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please visit: Rev. 1.5, 2022-12-8 https://.ma./support Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current1 Maximum Drain Current1 Soldering Temperature2 Screw Torque Thermal Resistance, Junction to Case3 Case Operating Temperature3, 4 Symbol VDSS VGS TSTG TJ IGMAX IDMAX TS τ RθJC TC Notes: 1 Current limit for long term, reliable operation per side of the device 2 Refer to the Application Note on soldering 3 CGHV40200PP at PDISS = 166 W 4 See also, the Power...