GTRB204402FC
GTRB204402FC is Thermally-Enhanced High Power RF GaN on SiC HEMT manufactured by MACOM Technology Solutions.
Description
The GTRB204402FC/1 is a 350-watt (P3d B) Ga N on Si C high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248C-4
Peak/Average Ratio, Gain (d B) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 150 m A, VGS(Peak) = -5.5 V,
ƒ = 2020 MHz, 3GPP WCDMA signal,
PAR = 10 d B, 3.84 MHz BW
40 35 30 25 20 15 10
5 0
Efficiency
20 Gain
-20
-40
PAR @ 0.01% CCDF
-60
GTRB204402FC_g1
-80
30 35 40 45 50 55
Average Output Power (d Bm)
Features
- Ga N on Si C HEMT technology
- Typical Pulsed CW performance, 2020 MHz, 48 V, 10 µs pulse width, 10% duty cycle, bined outputs
- Output power at P3d B = 350 W
- Efficiency at P3d B = 65%
- Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and Ro HS pliant
Typical RF Characteristics
Single-carrier WCDMA Specifications (tested in the Doherty evaluation board for 1930 to 2020 MHz) VDD = 48 V, IDQ = 150 m A, VGS(PEAK) =
- 5.5 V, channel bandwidth = 3.84 MHz, peak/average = 10 d B @ 0.01% CCDF
1930 MHz 1975 MHz 2020 MHz
POUT (d BM)
Gain (d...
