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GTRB206002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTRB206002FC/1 is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.

Key Features

  • high efficiency, and a thermally-enhanced package with earless flange. GTRB206002FC/1 Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 600 mA, VGS(PEAK) = -5.8 V, ƒ = 2020 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 28 24 20 16 12 8 4 0 27 80 Efficiency 60 40 Gain 20 0 -20 -40 PAR @ 0.01% CCDF -60 gtrb206002fc_g1 -80 32 37 42 47 52 57 Average Output Power (dBm) Features.
  • GaN on SiC HEMT tech.

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GTRB206002FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 48 V, 1930 – 2020 MHz Description The GTRB206002FC/1 is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. GTRB206002FC/1 Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 600 mA, VGS(PEAK) = -5.8 V, ƒ = 2020 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 28 24 20 16 12 8 4 0 27 80 Efficiency 60 40 Gain 20 0 -20 -40 PAR @ 0.