GTRB206002FC
GTRB206002FC is Thermally-Enhanced High Power RF GaN on SiC HEMT manufactured by MACOM Technology Solutions.
GTRB206002FC/1
Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 48 V, 1930
- 2020 MHz
Description
The GTRB206002FC/1 is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It Features high efficiency, and a thermally-enhanced package with earless flange.
GTRB206002FC/1 Package H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 600 mA,
VGS(PEAK) = -5.8 V, ƒ = 2020 MHz, 3GPP
WCDMA signal, PAR = 10 dB, 3.84 MHz BW
32 28 24 20 16 12
8 4 0
Efficiency
Gain
-20
-40
PAR @ 0.01% CCDF
-60 gtrb206002fc_g1
-80...
