| Title | GaN FETs 500W, 48V, 1930-2020 MHz GaN-SiC HEMT (50 pcs Reel) |
| Description | The GTRB206002FC/1 is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. GTRB206002FC/1 Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 600 mA, VGS(PEA... |
| Features |
high efficiency, and a thermally-enhanced package with earless flange.
GTRB206002FC/1 Package H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 600 mA,
VGS(PEAK) = -5.8 V, ƒ = 2020 MHz, 3GPP
WCDMA signal, PAR = 10 dB, 3.84 MHz BW
32 28 24 20 16 12
8 4 0
27
80
Efficiency
60
40
Gain...
|
| Datasheet |
 GTRB206002FC Datasheet - 695.42KB |
| Distributor |
Mouser Electronics |
| Stock | 0 In stock |
| Price |
50 units: 146.34 USD
|
| BuyNow |
 No Longer Stocked - Manufacturer a MACOM GTRB206002FC/1-V1-R0
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
Mouser Electronics |
50 units: 146.34 USD |
||
 Richardson RFPD |
No price available |
