GTRB264318FC Datasheet | MACOM Technology Solutions

Description The GTRB264318FC is a 400-watt (P3d B) Ga N on Si C high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 Peak/Average Ratio, Gain (d B) Efficiency (%) Single-carrier WCDMA Drive-up VCC = 48 V, IDQ = 150 m A, VGS(PEAK) = - 5.6 V, ƒ = 2690 MHz 3GPP WCDMA signal, 10 d B PAR, 3.84 MHz bandwidth Gain 4 30 30 Efficiency PAR @ 0.01% CCDF 45 gt r b264318f c- par 1 Average Output Power (d Bm) Features - Ga N on Si C HEMT technology - Broadband Internal matching - Typical pulsed CW performance: 10 µs pulse width, 10% duty cycle, 2675 MHz, 48 V, Doherty fixture - Gain = 15 d B @ 47.2 d Bm - Efficiency = 53% @ 47.2 d Bm - Output power at P3d B = 400 W - Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001) - Low thermal resistance - Pb-free and Ro HS pliant RF Characteristics Single-carrier WCDMA Specifications (tested in the production Doherty test fixture) VDD = 48 V, IDQ = 150 m A, POUT = 52.5 W avg, VGS(PEAK) = - 5.6 V, ƒ = 2675 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 d B @ 0.01% CCDF Characteristic...