GTRB266908FC
GTRB266908FC is Thermally-Enhanced High Power RF GaN on SiC HEMT manufactured by MACOM Technology Solutions.
Description
The GTRB266908FC is a 630-watt (P4d B) Ga N on Si C high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248KC-6/2 PN: GTRB266908FC
Peak/Average Ratio, Gain (d B) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 1000 m A, VGS(Peak) = -4.7 V, ƒ = 2675 MHz,
3GPP WCDMA signal, PAR = 10 d B,
3.84 MHz BW
Efficiency
Gain
-20
-40
0 25
PAR @ 0.01% CCDF
-60 gtrb266908fc_g1
-80
30 35 40 45 50 55
Average Output Power (d Bm)
Features
- Ga N on Si C HEMT technology
- Typical Pulsed CW performance, 2675 MHz, 48 V, 10 µs pulse width, 10% duty cycle, bined outputs
- Output power at P4d B = 630 W
- Efficiency at P4d B = 73%
- Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and Ro HS pliant
Typical RF Characteristics
Single-carrier WCDMA Specifications (tested in the Doherty evaluation board for 2515
- 2675 MHz) VDD = 48 V, IDQ = 1000 m A, POUT = 102.3 W, VGS(peak) = VGS at IDQ(peak) = 1000 m...
