GTRB267008FC Datasheet | MACOM Technology Solutions

Description The GTRB267008FC is a 620-watt (P4d B) Ga N on Si C high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. Package Type: H-37248KC-6/2 Peak/Average Ratio, Gain (d B) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 1000 m A, VGS(PEAK) = -4.8 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 d B, 3.84 MHz BW Efficiency Gain -20 PAR @ 0.01% CCDF -40 -60 25 30 35 40 45 50 55 Average Output Power (d Bm) Features - Ga N on Si C HEMT technology - Typical pulsed CW performance, 2690 MHz, 48 V, bined outputs, 10 µs pulse width, 10% duty cycle - Output power at P4d B = 619 W - Efficiency at P4d B = 72% - Human Body Model Class 1C (per ANSI/ESDA/ JEDEC JS-001) - Pb-free and Ro HS pliant Typical RF Characteristics Single-carrier WCDMA Specifications (tested in the Doherty evaluation board for 2496 - 2690 MHz) VDD = 48 V, IDQ = 1000 m A, VGS(Peak) = - 4.8 V, channel bandwidth = 3.84 MHz, peak/average = 10 d B @ 0.01% CCDF 2490 MHz 2590 MHz 2690 MHz POUT (d...