PXAE261908NF - High Power RF LDMOS FET

Product Overview

MACOM

Datasheet Details

Part number	PXAE261908NF
Manufacturer	MACOM
File Size	715.41 KB
Description	High Power RF LDMOS FET
Datasheet	PXAE261908NF Datasheet
Additional preview pages of the PXAE261908NF datasheet.

Product details

Description

The PXAE261908NF is a 240-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2515 to 2675 MHz frequency band.

Features

include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAE261908NF Package PG-HBSOF-6-3 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 450 mA, VGS(PEAK) = 1.5 V, ƒ = 2675 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 20 40 Efficiency 16 20 12 0 Gain 8 -20.

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Published: May 9, 2024 |