WGC22630 amplifier equivalent, thermally enhanced gan amplifier.
* GaN on SiC HEMT Technology
* Pulsed CW Performance: 2155 MHz, 48 V, 40 µs
Pulse Width, 10% Duty Cycle, Combined Outputs
* Output Power @ P4dB = 630 W
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* Cellular Power
Description
The WGC22630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use i.
The WGC22630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It features optimized operation from 2110 - 2200 MHz and a thermally-enhanced over-molded plastic package.
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