2SC2873-O
2SC2873-O is NPN Silicon Transistors manufactured by Micro Commercial Components.
Micro mercial ponents
omponents 20736 Marilla Street Chatsworth !"# $
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2SC2873-O 2SC2873-Y
NPN Silicon Epitaxial Transistors
C
1. Base 2. Collector 3. Emitter
Features x x x
- Low saturation voltage High speed switching time plementary to 2SA1213 Lead Free Finish/Ro HS pliant ("P" Suffix designates Ro HS pliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1
Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 50 50 5.0 2.0 0.5 150 -55 to +150 Unit V V V A W к к
- -
Maximum Ratings
SOT-89
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol Parameter Collector-Emitter Breakdown Voltage (IC=1m Adc, IB=0) Collector-Base Breakdown Voltage (IC=0.1m Adc, IB=0) Emitter-Base Breakdown Voltage (IE=0.1m Adc, IC=0) Collector-Base Cutoff Current (VCB=50Vdc,IE=0) Emitter-Base Cutoff Current (VEB=5.0Vdc, IC=0) DC Current Gain (IC=0.5Adc, VCE=2.0Vdc) DC Current Gain
- (IC=2.0Adc, VCE=2.0Vdc) Collector-Emitter Saturation Voltage (IC=1.0Adc, IB=0.05Adc) Base-Emitter Saturation Voltage (IC=1.0Adc,IB=0.05Adc) Transition Frequency (VCE=2.0Vdc, IC=0.5Adc) Collector output capacitance (VCB=10Vdc,IE=0, f=1.0MHz) Min 50 50 5.0 ----Typ ----------Max ------0.1 0.1 Units Vdc Vdc Vdc u Adc u Adc
D G F H J
OFF CHARACTERISTICS
V(BR)CEO V (BR)CBO V (BR)EBO ICBO IEBO
ON CHARACTERISTIC h FE(1) h FE(2) VCE(sat) VBE(sat) f T Cob 70 20 ----------------120 30 240 --0.5 1.2 --------Vdc Vdc MHz p F
CLASSIFICATION OF HFE (1)
Rank Range Marking O 70-140 MO Y 120-240 MY...
