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2SC2873 - Silicon NPN Transistor

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Part number 2SC2873
Manufacturer Toshiba Semiconductor
File Size 174.54 KB
Description Silicon NPN Transistor
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications 2SC2873 Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1213 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO 50 V VCEO 50 V VEBO 5 V IC 2 A IB 0.4 A PC 500 PC mW 1000 (Note 1) Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.
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