MCC
R
Micro Commercial Components
SI2301A
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 8V, VDS = 0V
VGS = -8V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
VDS = -5V, ID = -2.8A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -6V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -6V, ID = -1A,
VGS = -4.5V, RGEN = 6Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -6V, ID = -2.8A,
VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -0.75A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-20
-0.5
Typ
-0.7
80
110
8
880
270
175
11
5
32
23
11
1.5
2.1
Max Units
-1
100
-100
V
µA
nA
nA
-0.9 V
120 mΩ
150 mΩ
S
pF
pF
pF
20 ns
10 ns
65 ns
45 ns
14.5 nC
nC
nC
-0.75
-1.2
A
V
Revision: B
www.mccsemi.com
2 of 5
2018/04/04
