SI2303
SI2303 is P-Channel Enhancement Mode Field Effect Transistor manufactured by Micro Commercial Components.
Features
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- Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol VDS ID IDM VGS PD R©JA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating -30 -3 -10 f20 0.25 500 -55 to +150 -55 to +150 Unit V A A V W к/W к к
Halogen free available upon request by adding suffix "-HF" -30V,-2.6A, RDS(ON)=130m¡@VGS= -10V -30V,-2.0A, RDS(ON)=180m¡@VGS= -4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable Lead free product is acquired SOT-23 Package Marking Code: S3 Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1
P-Channel Enhancement Mode
Field Effect Transistor
SOT-23
1.GATE
2. SOURCE
3. DRAIN
DIMENSIONS
Internal Block Diagram
DIM A B C D E F G H J K
INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015
MAX .120 .104 .055 .041 .081 .024 .0039 .044 .007 .020
MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37
MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51
NOTE
Suggested Solder Pad Layout
.031 .800 .035 .900
.079 2.000
S inches mm
.037 .950
.037 .950
Revision: B
.mccsemi.
1 of 5
2013/01/01
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