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MCC

SI2303 Datasheet Preview

SI2303 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
SI2303
Features
Halogen free available upon request by adding suffix "-HF"
-30V,-2.6A, RDS(ON)=130m¡@VGS= -10V
-30V,-2.0A, RDS(ON)=180m¡@VGS= -4.5V
High dense cell design for extremely low RDS(ON)
Rugged and reliable
Lead free product is acquired
SOT-23 Package
Marking Code: S3
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
VGS
PD
R©JA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambientb
Operating Junction Temperature
Storage Temperature
Rating
-30
-3
-10
f20
0.25
500
-55 to +150
-55 to +150
Unit
V
A
A
V
W
к/W
к
к
Internal Block Diagram
D
G
S
P-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
3
1.GATE
CB
2. SOURCE
3. DRAIN
12
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .104
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
NOTE
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: B
www.mccsemi.com
1 of 5
2013/01/01




MCC

SI2303 Datasheet Preview

SI2303 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

MCC
TM
Micro Commercial Components
SI2303
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -10µA
-30
V
Zero Gate Voltage Drain Current
IDSS
VDS = -30V, VGS = 0V
-1 µA
Gate Body Leakage Current, Forward
IGSSF
VGS = 20V, VDS = 0V
100 nA
Gate Body Leakage Current, Reverse
IGSSR
VGS = -20V, VDS = 0V
-100 nA
On Characteristics C
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID =-250µA -1
-3 V
Static Drain-Source On-Resistance
RDS(on)
VGS = -10V, ID = -2.6A
VGS = -4.5V, ID = -2.0A
130 mȍ
180 mȍ
Forward Transconductance
gFS VDS = -10V, ID = -1.7A
2.4
S
Dynamic Characteristics d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
226
87
19
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD = -15V, ID = -1A,
VGEN = -10V, RG=6ȍ,
RL=15ȍ
9 20 ns
9 20 ns
18 35 ns
6 20 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS = -15V, ID = -1.7A,
Qgs
VGS =-10V
Qgd
5.8 10 nC
0.8 nC
1.5 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Voltage C
VSD VGS = 0V, IS = -1.25A
-1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Revision: B
www.mccsemi.com
2 of 5
2013/01/01


Part Number SI2303
Description P-Channel Enhancement Mode Field Effect Transistor
Maker MCC
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SI2303 Datasheet PDF





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