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MSN0790K - N-Channel Enhancement Mode Power MOS FET

Features

VDS = 70V,ID =90A RDS(ON) < 7m Ω @ VGS=10V (Typ:5.9mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Lead Free.

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MSN0790K n-channel enhancement mode power mos fet by MORESEMI - Datasheet Preview

Datasheet Details

Part number	MSN0790K
Manufacturer	MORESEMI
File Size	450.72 KB
Description	N-Channel Enhancement Mode Power MOS FET
Datasheet	MSN0790K Datasheet

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Full PDF Text Transcription

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MSN0790K 70V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 70V,ID =90A RDS(ON) < 7m Ω @ VGS=10V (Typ:5.

Published: Mar 13, 2017 |