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MT3421 - P-Channel Power MOSFET

This page provides the datasheet information for the MT3421, a member of the MT3421-MOS P-Channel Power MOSFET family.

Description

This P-Channel Power MOSFET is pro duced using MOS-TECH Semiconductor’s advanced PowerTrench process that has b een especially tailored to minimize the on-state r esistance and yet maintain low gate charge for superior switching performance.

Features

  • 4.3 A,.
  • 25 V. RDS(ON) = 0.08 Ω @ VGS =.
  • 4.5 V RDS(ON) = 0.11 Ω @ VGS =.
  • 2.5 V.
  • Low gate charge (3.6 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOTTM -23 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D S SOT-23 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Volt.

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Datasheet preview – MT3421

Datasheet Details

Part number MT3421
Manufacturer MOS-TECH
File Size 712.81 KB
Description P-Channel Power MOSFET
Datasheet download datasheet MT3421 Datasheet
Additional preview pages of the MT3421 datasheet.

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Full PDF Text Transcription

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MT1 MOS-TECH Semiconductor Co.,LTD MT31 Single P-Channel Power MOSFET General Description This P-Channel Power MOSFET is pro duced using MOS-TECH Semiconductor’s advanced PowerTrench process that has b een especially tailored to minimize the on-state r esistance and yet maintain low gate charge for superior switching performance. These devices a re well suit ed for portable electronics applications: load s witching and power management, battery charging circuits and DC/DC conversion. D Features • –4.3 A, –25 V. RDS(ON) = 0.08 Ω @ VGS = –4.5 V RDS(ON) = 0.11 Ω @ VGS = –2.5 V • Low gate charge (3.
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