Description
The MDD1901 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 100V ID = 40A @VGS = 10V RDS(ON)
< 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V
D
Absolute Maximum Ratings (Tc = 25oC)
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (1)
Characteristics
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1)
G S
TC=25oC TC=100oC
TC=25oC TC=100oC
Symbol VDSS.
MDD1901-MagnaChip.pdf
